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| polyfet rf devices LB501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 175.0 Watts Push - Pull Package Style LB HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 440 Watts Junction to Case Thermal Resistance o 0.44 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 23.0 A RF CHARACTERISTICS ( 175.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 13 50 5:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = 0.80 A, Vds = 28.0 V, F = Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz 500 MHz VSWR Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 4.8 0.30 30.00 150.0 7.5 100.0 MIN 65 1.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.25 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 13.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com LB501 POUT VS PIN GRAPH L B 5 0 1 F = 5 0 0 M H z ; V d s = 2 8 V d c , Id q = 1 . 2 A CAPACITANCE VS VOLTAGE L 5 1 D IE 1000 C A P A C IT A N C E 210 180 150 120 90 60 30 0 0 4 8 12 P i n i n W a tts 16 20 E ffic ie n c y @ 180W = 5 5 % 17 16 Pout 15 14 13 Ciss 100 Coss 10 Gain 12 11 10 Crss 1 0 5 10 15 20 V D S IN V O L T S 25 30 IV CURVE L5B 1 DIE 30 25 20 ID IN AMPS ID & GM VS VGS L 5 B 1 D IE 100 ID , G M v s V G Id 15 10 5 0 0 vg=2v 2 4 Vg=4v 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 vg=10v 18 20 vg=12v 10 G 1 0 2 4 gM VDS=10V 6 8 V g s in V o lts 10 12 14 Zin Zout PACKAGE DIMENSIONS IN INCHES LB501 Vdd=28V Idq=800mA Pout=160W Freq(MHz) 500 3.1 Zin -j0.6 3.6 Zout +j2.6 Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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